1N8033-GA related parameters_1N8033-GA PDF documentation_GeneSiC Semiconductor

Diodes - Rectifiers - Single

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Specifications

Description	Details
Series	-
Package	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4.3A (DC)
Voltage - Forward (Vf) (Max) @ If	1.65 V @ 5 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	5 µA @ 650 V
Capacitance @ Vr, F	274pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-276AA
Supplier Device Package	TO-276
Operating Temperature - Junction	-55°C ~ 250°C

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