MPQ6502 TIN/LEAD related parameters_MPQ6502 TIN/LEAD PDF documentation_Central Semiconductor Corp

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	2 NPN, 2 PNP
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	30V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 30mA, 300mA
Current - Collector Cutoff (Max)	30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V
Power - Max	650mW
Frequency - Transition	200MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	14-DIP (0.300", 7.62mm)
Supplier Device Package	TO-116

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