IMH20TR1G related parameters_IMH20TR1G PDF documentation_ON Semiconductor

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	15V
Resistor - Base (R1)	2.2kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	-
Frequency - Transition	-
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	SC-74R

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