NTE15 related parameters_NTE15 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	19V
Frequency - Transition	1.1GHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	39 @ 5mA, 10V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	125°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SIP
Supplier Device Package	3-SIP

Other

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