MT3S111P(TE12L,F) related parameters_MT3S111P(TE12L,F) PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1.25dB @ 1GHz
Gain	10.5dB
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

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