MS2322 related parameters_MS2322 PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)	-
Gain	10dB
Power - Max	87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 100mA, 5V
Current - Collector (Ic) (Max)	1.5A
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	M115
Supplier Device Package	M115

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