BFG135AE6327XT related parameters_BFG135AE6327XT PDF documentation_Infineon Technologies

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,938(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	6GHz
Noise Figure (dB Typ @ f)	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain	9dB ~ 14dB
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 8V
Current - Collector (Ic) (Max)	150mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4

Other

Price advantage, BFG135AE6327XT is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
BFP196WE6327	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	RF TRANSISTOR, L BAND, NPN	$0.12610	In Stock:32362
TAN500	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 75V 1.215GHZ 55ST	No price	In Stock:17044
2SA1778-3-TB-E	ON Semiconductor	Transistors - Bipolar - RF	Datasheet	PNP TRANSISTOR	$0.16150	In Stock:87166
MS1582	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 30V 860MHZ M173	No price	In Stock:17048
BFP181E7764HTSA1	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 12V 8GHZ SOT143-4	$0.43700	In Stock:2352