BFM505,115 related parameters_BFM505,115 PDF documentation_NXP USA Inc.

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	8V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
Gain	-
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 6V
Current - Collector (Ic) (Max)	18mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	6-TSSOP

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