BFP640FESDH6327XTSA1 related parameters_BFP640FESDH6327XTSA1 PDF documentation_Infineon Technologies

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.7V
Frequency - Transition	46GHz
Noise Figure (dB Typ @ f)	0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Gain	8B ~ 30.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 30mA, 3V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP

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