MS1202 related parameters_MS1202 PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	35V
Frequency - Transition	118MHz ~ 136MHz
Noise Figure (dB Typ @ f)	-
Gain	8.4dB
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	5 @ 100mA, 5V
Current - Collector (Ic) (Max)	1A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	M135
Supplier Device Package	M135

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