UNR422100A related parameters_UNR422100A PDF documentation_Panasonic Electronic Components

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Cut Tape (CT)Tape & Box (TB)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	200 MHz
Power - Max	300 mW
Mounting Type	Through Hole
Package / Case	3-SSIP
Supplier Device Package	NS-B1

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