IRL6297SDTRPBF related parameters_IRL6297SDTRPBF PDF documentation_Infineon Technologies

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	15A
Rds On (Max) @ Id, Vgs	4.9mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2245pF @ 10V
Power - Max	1.7W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SA
Supplier Device Package	DIRECTFET™ SA

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