HS8K1TB related parameters_HS8K1TB PDF documentation_Rohm Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 11A (Ta)
Rds On (Max) @ Id, Vgs	14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6nC, 7.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	348pF, 429pF @ 15V
Power - Max	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-UDFN Exposed Pad
Supplier Device Package	HSML3030L10

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