TPS1120DR related parameters_TPS1120DR PDF documentation_Texas Instruments

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	15V
Current - Continuous Drain (Id) @ 25°C	1.17A
Rds On (Max) @ Id, Vgs	180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	840mW
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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