PD20010S-E related parameters_PD20010S-E PDF documentation_STMicroelectronics

MOSFETs - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,738(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	LDMOS
Frequency	2GHz
Gain	11dB
Voltage - Test	13.6 V
Current Rating (Amps)	5A
Noise Figure	-
Current - Test	150 mA
Power - Output	10W
Voltage - Rated	40 V
Package / Case	PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Supplier Device Package	PowerSO-10RF (Straight Lead)

Other

Price advantage, PD20010S-E is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
MRFE6S9160HSR5	NXP USA Inc.	MOSFETs - RF	Datasheet	FET RF 66V 880MHZ NI-780S	No price	In Stock:18966
MCH3309-TL-H	ON Semiconductor	MOSFETs - RF	Datasheet	PCH 2.5V DRIVE SERIES	$0.06930	In Stock:335090
MRF24G300HSR5	NXP USA Inc.	MOSFETs - RF	Datasheet	RF FET GAN 330W 50V 2500MHZ	$198.58720	In Stock:2112
NE5550979A-T1-A	Renesas Electronics America Inc	MOSFETs - RF	Datasheet	RF N-CHANNEL POWER MOSFET	$2.73600	In Stock:6996
BLF8G24LS-150GVQ	Ampleon USA Inc.	MOSFETs - RF	Datasheet	RF FET LDMOS 65V 19DB SOT1244C	$70.36800	In Stock:2194