NTBGS001N06C related parameters_NTBGS001N06C PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	42A (Ta), 342A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V, 12V
Rds On (Max) @ Id, Vgs	1.1mOhm @ 112A, 12V
Vgs(th) (Max) @ Id	4V @ 562µA
Gate Charge (Qg) (Max) @ Vgs	139 nC @ 30 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11110 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 245W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (TO-263)
Package / Case	-

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