TP65H480G4JSG-TR related parameters_TP65H480G4JSG-TR PDF documentation_Transphorm

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V
Rds On (Max) @ Id, Vgs	560mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id	2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	8 V @ 8 nC
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	400 V @ 760 pF
FET Feature	-
Power Dissipation (Max)	13.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-PQFN (5x6)
Package / Case	3-SMD, Flat Lead

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