NTTFS4H07NTWG related parameters_NTTFS4H07NTWG PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	18.5A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	771 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.64W (Ta), 33.8W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-WDFN (3.3x3.3)
Package / Case	8-PowerWDFN

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