BSM180C12P2E202 related parameters_BSM180C12P2E202 PDF documentation_Rohm Semiconductor

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：3,454(Ref. price)

Qty.	Unit Price	Ext. Price
1	$570	$570

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tray
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	20000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1360W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module

Other

Price advantage, BSM180C12P2E202 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FCP260N60E	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 15A TO220-3	$2.43540	In Stock:3970
RRS040P03FRATB	Rohm Semiconductor	MOSFETs - Single	Datasheet	MOSFET P-CH 30V 4A 8SOP	Not For New Designs	In Stock:20104
R6030KNX	Rohm Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 30A TO220FM	$3.49470	In Stock:3466
STW63N65DM2	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 650V 65A TO247	$7.33152	In Stock:20108
SIRA12DP-T1-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 25A PPAK SO-8	$0.99990	In Stock:3711