IXRFSM12N100 related parameters_IXRFSM12N100 PDF documentation_IXYS-RF

MOSFETs - Single

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Specifications

Description	Details
Series	SMPD
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	1.05Ohm @ 6A, 15V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2875 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	940W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	16-SMPD
Package / Case	16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad

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