SIRA26DP-T1-RE3 related parameters_SIRA26DP-T1-RE3 PDF documentation_Vishay Siliconix

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	2247 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	43.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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