MWI50-12E6K related parameters_MWI50-12E6K PDF documentation_IXYS

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,980(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Box
IGBT Type	-
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	51 A
Power - Max	210 W
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 35A
Current - Collector Cutoff (Max)	300 µA
Input Capacitance (Cies) @ Vce	2 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Chassis Mount
Package / Case	E1
Supplier Device Package	E1

Other

Price advantage, MWI50-12E6K is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FZ600R17KE3HOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1700V 840A 3150W	$206.04870	In Stock:1758
MUBW10-06A6K	IXYS	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 600V 11A 50W E1	No price	In Stock:18574
IRG5U400SD12B	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 600A POWIR 62	No price	In Stock:18576
FMG1G50US60H	ON Semiconductor	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 600V 50A 250W 7PMGA	No price	In Stock:18578
APTGL60TL120T3G	Microchip Technology	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 80A 280W SP3	$77.87150	In Stock:18580