HGT1S2N120CN related parameters_HGT1S2N120CN PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	13 A
Current - Collector Pulsed (Icm)	20 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 2.6A
Power - Max	104 W
Switching Energy	96µJ (on), 355µJ (off)
Input Type	Standard
Gate Charge	30 nC
Td (on/off) @ 25°C	25ns/205ns
Test Condition	960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	TO-262

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