APT70GR65B2DU40 related parameters_APT70GR65B2DU40 PDF documentation_Microsemi Corporation

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	134 A
Current - Collector Pulsed (Icm)	280 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 70A
Power - Max	595 W
Switching Energy	-
Input Type	Standard
Gate Charge	305 nC
Td (on/off) @ 25°C	18ns/170ns
Test Condition	433V, 70A, 4.3Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	T-MAX™ [B2]

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