MMIX1X200N60B3 related parameters_MMIX1X200N60B3 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	223 A
Current - Collector Pulsed (Icm)	1000 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 100A
Power - Max	625 W
Switching Energy	2.85mJ (on), 2.9mJ (off)
Input Type	Standard
Gate Charge	315 nC
Td (on/off) @ 25°C	48ns/160ns
Test Condition	360V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Supplier Device Package	24-SMPD

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