IXYA8N90C3D1 related parameters_IXYA8N90C3D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	900 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	48 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 8A
Power - Max	125 W
Switching Energy	460µJ (on), 180µJ (off)
Input Type	Standard
Gate Charge	13.3 nC
Td (on/off) @ 25°C	16ns/40ns
Test Condition	450V, 8A, 30Ohm, 15V
Reverse Recovery Time (trr)	114 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AA

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