IXXN200N65A4 related parameters_IXXN200N65A4 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	XPT™, GenX4™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	440 A
Current - Collector Pulsed (Icm)	1200 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 200A
Power - Max	1250 W
Switching Energy	8.8mJ (on), 6.7mJ (off)
Input Type	Standard
Gate Charge	736 nC
Td (on/off) @ 25°C	140ns/1.04µs
Test Condition	400V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)	160 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227B

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