STGF20NB60S related parameters_STGF20NB60S PDF documentation_STMicroelectronics

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	24 A
Current - Collector Pulsed (Icm)	70 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 20A
Power - Max	40 W
Switching Energy	840µJ (on), 7.4mJ (off)
Input Type	Standard
Gate Charge	83 nC
Td (on/off) @ 25°C	92ns/1.1µs
Test Condition	480V, 20A, 100Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FP

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