IXGT50N90B2D1 related parameters_IXGT50N90B2D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HiPerFAST™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	900 V
Current - Collector (Ic) (Max)	75 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 50A
Power - Max	400 W
Switching Energy	4.7mJ (off)
Input Type	Standard
Gate Charge	135 nC
Td (on/off) @ 25°C	20ns/350ns
Test Condition	-
Reverse Recovery Time (trr)	200 ns
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package	TO-268

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