RGS80TS65HRC11 related parameters_RGS80TS65HRC11 PDF documentation_Rohm Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	73 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 40A
Power - Max	272 W
Switching Energy	1.05mJ (on), 1.03mJ (off)
Input Type	Standard
Gate Charge	48 nC
Td (on/off) @ 25°C	37ns/112ns
Test Condition	400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N

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