MRF5812G related parameters_MRF5812G PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	2dB ~ 3dB @ 500MHz
Gain	13dB ~ 15.5dB
Power - Max	1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 50mA, 5V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

Other

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